P. Miskiewicza,b, J. Junga, S. Kotarbaa, I. Glowackia, M. Shkunovb,
M. Heeneyb, W. Zhangb, W. Maniukiewiczc, J. Ulanskia
b Merck Chemicals, Chilworth Science Park, University Parkway, Southampton, SO16 7QD, UK
c Institute of General and Ecological Chemistry, Technical University of Lodz, 90-924 Lodz, Poland
The paper presents preparation and performance of field-effect-transistors made of calamitic a,w‑dipropylquaterthiophene. Large area of highly oriented layers of this soluble oligothiophene derivative were obtained by the so called zone-casting technique. UV-VIS polarized spectroscopy, Raman polarized spectroscopy, AFM, X-ray diffraction and field-effect characteristics show high anisotropy of the zone-cast layer. Of particular importance is large anisotropy of the charge-carrier mobility measured parallel and perpendicular to the zone-casting direction.
This work was financially supported through the EC Integrated Project NAIMO NMP4-CT-2004-500355 and MNiI Grant T08E 01327, Poland.